ABSTRACT

Energy levels for the conduction band for quantum well structures are obtained as below. Wavefunctions in a well (well width, Lz; well potential barrier, !l.Ee) are given by

where the upper part of the curly bracket of (C.l) is for odd n, the lower being for even n. One can derive the eigenvalue equation for the energy level Een for each subband n using the boundary conditions (continuity of wavefunctions and their derivatives) as

where me1 and me2 are the effective masses of the conduction electrons in the active region and the waveguide region. Energy bands for heavy holes and light holes are obtained in a similar way. Energy levels for intersubbands of InGaAsP(A = 808 nm)/GaAs are shown in table C.l.