Hetero-epitaxial double-atomic-layer system of monolayer graphene/monolayer h-BN on N i( ll l) studied by HREELS C Oshima, A Itoh, E Rokuta, N Tanaka and K Yamashita

Surface characterization at operating temperatures, i.e. 1000-2000 K, is inevitable to elucidate a basic mechanism of an electron emissivity of thermal field (TF) or Schottky emitters. For this, we have been involved in the development of the apparatus for the combined surface analysis techniques employing Auger electron spectroscopy (AES), ion scattering spectroscopy (ISS), reflection high energy electron diffraction (RHEED) and work function measurement. This study has clarified the nature of the self-recovery function of Zr-O/W(100) system [1-3].