ABSTRACT

ABSTRACT: Focused ion beam systems are becoming routinely used for the preparation of transmission electron microscopy cross-sections. Here we report on the effect of different FIB milling conditions, such as low energy milling and iodine gas assisted etching, on specimens of copper indium sulphide solar cells and III-V semiconductors. High-resolution electron microscopy has been used to assess the specimens. The depth of the damage at the sidewalls and the amount of preferential milling of the different materials of the specimens has been determined by making cross-sections of the specimens.