Interface reactions in Ti/Si1-xGex/Si(100) studied by TEM and ADF imaging on a newly installed 200kV TEM/STEM

ABSTRUCT : We describe some useful results of direcdy observing Ti/Sio.8Geo.2/Si( 100) interfaces by high-resolution electron microscopy and dark-field scanning transmission electron microscopy, giving us key-information about initial structure models of the interfaces. An EELS spectrum from the localized areas at interfaces is also presented.