ABSTRACT
GaN„Asi, STRUCTURES 68 3.3 NITROGEN RESONANT STATES IN DISORDERED
GaN„Asi.„ STRUCTURES 71 3.4 TEN-BAND kp MODEL FOR DILUTE NITRIDE
ALLOYS 76 3.5 LOCAL DISORDER EFFECTS IN GaInNAs 80 3.6 ALLOY SCATTERING AND MOBILITY IN DILUTE
NITRIDE ALLOYS 80 3.7 CONCLUSIONS 83
Acknowledgments 84 References 85
3.1 INTRODUCTION
This book reflects the considerable recent interest in and the fascination of Ga,_),InyNxAsi_„ and related alloys. When a small fraction of arsenic atoms in GaAs is replaced by nitrogen, the energy gap initially decreases rapidly, at about 0.1 eV per percent of N for x < 0.03 [1]. This behavior is markedly different to conventional semiconductors, and it is of interest both from a fundamental perspective and also because of its significant potential device
applications. The strong bowing opens the possibility of using GaInNAs to get optical emission on a GaAs substrate at the technologically important wavelengths of 1.3 and 1.55 gm, considerably expanding the capabilities of GaAs for optoelectronics [2-5].
