ABSTRACT
Dilute nitrides form a novel material system with fascinating physical properties [1] desirable for various applications in optoelectronics and photonics. In combination with the possibility of lattice-matching to Si and GaAs, a giant bowing in the band-gap energy in dilute nitrides provides an increased flexibility in tuning material properties for applications as highly efficient light emitters, operating within the fiber-optic communications window (1.3-1.55 gm), and in multijunction solar cells with improved efficiency. This has led to considerable research efforts to understand recombination processes in the materials. The aim of this chapter is to provide a brief account of the present status of this issue.
