ABSTRACT
Gallium nitride (GaN) and its close chemical counterparts-aluminum nitride (AlN), indium nitride, and their ternary alloys Al(Ga, In)N-form the III-V nitride-based semiconductor family. Despite the incredible potential of the nitride materials, device performance and the fundamental understanding of the properties are still limited by the material quality. Most applications of nitrides have relied on heteroepitaxy. A wide variety of materials have been studied for substrates for nitride epitaxy including insulating metal oxides, metals, metal nitrides, and other semiconductors. The chapter focuses on the various growth methods that have been intensively studied in the past few decades, including hydride vapor phase epitaxy (HVPE), sublimation, ammonothermal growth, high-pressure solution growth, and the combination of growth methods. Various techniques were used for bulk crystal growth, template growth, single substrate growth, boule growth, and seeded regrowth. The analysis of the defect density in the regrown HVPE-GaN with different thicknesses has shown that the trend of decreasing the defect density with increasing thickness remains.
