ABSTRACT

The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.

chapter Chapter 1|66 pages

Ohmic Contacts to GaN

chapter Chapter 5|77 pages

AlGaN/GaN High Electron Mobility Transistors

chapter Chapter 10|64 pages

AlGaInN MQW Laser Diodes

chapter Chapter 12|67 pages

III-Nitride-Based UV Photodetectors

chapter Chapter 13|82 pages

III-Nitride Ultraviolet Photodetectors

chapter Chapter 14|17 pages

AlGaN UV Photodetectors