ABSTRACT
Sample wafers for particle removal studies were prepared with an automated aerosol particle deposition tool made by MSP Corporation, USA (Model 2300D). The particle deposition pattern was a combination of full random coverage and a spot (see Figure 1 for an example). In total, approximately 2300 Si3N4 particles
were deposited on prime 300 mm wafers. The particle measurements were performed on a Tencor SP-1 instrument. Surface metal measurements were obtained with the vapor phase decomposition-ion coupled plasma mass spectroscopy (VPD-ICPMS) technique. Time-of-flight secondary ion mass spectrometry (TOFSIMS) was used to assess if any residual chelating agent or surfactant remained on the wafer surface (after the rinsing and drying).
