ABSTRACT

Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices.
This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.

chapter Chapter 3|31 pages

Ternary Alloys

chapter Chapter 7|31 pages

GaAsN Alloys and GaN/GaAs Thin-Layer Structures

chapter Chapter 13|33 pages

High-Density ECR Etching of Group-III Nitrides

chapter Chapter 14|37 pages

Contacts on III-Nitrides

chapter Chapter 15|37 pages

III-V Nitride Based LEDs

chapter Chapter 16|26 pages

III-V Nitride Electronic Devices