ABSTRACT
Semiconductor nanowires have been regarded as promising build-blocks for semiconductor electronic and optoelectronic circuits. Tailoring the
crystallographic orientation of semiconductor nanowires (NW) is one of the key aspects of growth control. It has been shown experimentally that the growth direction can be changed by, e.g. applying corresponding lattice-matching substrates for wurtzite NWs1,2, or changing growth temperature for ZnSe NWs3, or using small-sized catalyst for Si NWs 4,5. Several theoretical studies have been carried out to describe the thermodynamics and kinetics of semiconductor NWs and predict their size-dependent behaviour5-9.
