ABSTRACT
The operational principle and the features of floating body cell (FBC) are described in comparison with those of the one-transistor and one-capacitor dynamic random access memory cell. The method of selective write realizes one of the key characteristics, bringing about a trade-off between the selectivity and the bit line disturb which is necessary to be considered in designing the memory using FBC. The difference between FBCs on partially depleted silicon-on-insulator and on fully depleted silicon-on-insulator is summarized. Finally, various write and read methods are explained and compared.
