ABSTRACT
Growth of metal-catalyzed semiconductor NWs using chemical vapor deposition techniques is generally accepted to follow the VLS growth mechanism3 which uses a metallic nanoparticle, typically Au, that forms a low-temperature liquid eutectic with the desired growth material (Fig. 2.1a). Gas precursors containing reactant material are introduced and catalytically decompose with the incorporation of
the growth species through the nanoparticle surface forming a liquid droplet near the eutectic temperature. This liquid droplet continues to adsorb decomposing solute atoms from the vapor, leading to a supersaturated state (Fig. 2.1b), at which point crystallization of the semiconductor occurs at the liquid-solid interface resulting in 1-D NW growth (Fig. 2.1c).
