ABSTRACT
In this chapter, we review some of our recent works in using kinetic
Monte Carlo (KMC) simulations to model the pattern formation
behavior on crystalline surfaces during low-energy ion sputtering.
The KMC simulation allows us to control the rate of different
atomistic processes (e.g., diffusion, defects creation, clustering)
independently. Thereby, it allows us to study how each of these
processes controls the pattern formation behavior. We found that
by using Sigmund’s sputtering mechanism, we can quantitatively
reproduce many of the results predicted by the continuum models.
One of the exceptions is in the high-temperature and low-ion-flux
regime, where roughening is limited by the nucleation of new steps
on the surface. These nucleation processes are often neglected in
the continuum models. Furthermore, many recent experiments and
simulations show that surface craters and adatoms created during
an ion impact can play a more important role in the patterning
behavior than the sputter vacancies. In the last part of this chapter,
we demonstrate the effects ofmultiple defect creation on the pattern
formation kinetics.
