MOS Structure and CMOS Devices

A metal-oxide-semiconductor (MOS) structure is fabricated by

growing a silicon dioxide (SiO2) layer on a silicon surface and

then depositing a metal (or poly-silicon) layer on top of that.

Together with p-n junctions, MOS structures have a particularly im-

portant role in semiconductor devices. A MOS structure is not only

a constituent of field effect transistors (FETs) but also a stand-alone

device (MOS capacitor) that is an essential tool for characterizing

semiconductor and insulator material properties.