ABSTRACT
Ultra-scaled FinFET transistors bear unique fingerprint-like device-
to-device differences attributed to random single impurities. This
chapter describes how, through correlation of experimental data
with multimillion atom tight-binding simulations using the NEMO
3-D code, it is possible to identify the impurity’s chemical species
and determine their concentration, local electric field and depth
below the Si/SiO2 interface. The ability to model the excited states
rather than just the ground state is the critical component of
the analysis and allows the demonstration of a new approach to
atomistic impurity metrology.
