ABSTRACT
We present recent progress in the growth of nitride-based laser
diodes (LDs) and light-emitting diodes (LEDs) made by plasma-
assisted MBE (PAMBE). This technology is ammonia free, and
nitrogen for the growth is activated by RF plasma source from
nitrogen molecules. The recent demonstration of continuous wave
(CW) blue InGaN LDs has opened a new perspective for PAMBE in
optoelectronics. The LDs were fabricated on low threading disloca-
tion density bulk GaN substrates at low growth temperatures 550-
750◦C. In this work, we describe the nitride growth fundamentals, the peculiarities of InGaN growth as well as properties of LEDs and
LDs made by PAMBE.
