ABSTRACT
Lattice mismatch epitaxy is vital to synthesizing a wide range of
materials on a limited number of available substrates. To realize
compound semiconductor devices for any desired application,
a variety of material systems and alloy combinations must be
tuned to match the rather small choice of existing substrates.
Considerable efforts have been made over the last few decades to
epitaxially grow dissimilar materials with larger or smaller lattice
size than that of the substrate. Strain buildup in such epilayers
results in defects that are detrimental to reliable device operation.
With advances in growth techniques combined with careful lattice
engineering, significant progress has beenmade to reduce the defect
density. The applications for semiconductor devices are numerous
and the interest in heteroepitaxy has been increasing steadily to implement and integrate differentmaterial systemswith the already
existing and well-established technology. Other factors, such as cost,
size, and quality of the available wafers, electrical/optical/thermal
properties, compatibility of device integration, make mismatch
lattice engineering even more significant. This chapter focuses on
antimonide-based materials and devices that can be grown on two
verywell-studied substrates, GaAs and Si. A very unique scheme that
can accommodate the strain mismatch, called the interfacial-misfit
(IMF)-dislocation-array technique, is presented. In the later sections
of this chapter, the growth and formation of misfit dislocation
arrays, structural characterizations, strain energy calculations, and
modeling of these arrays will be presented.