ABSTRACT
The breakthrough of directwafer bondingwas achievedwith silicon-
on-insulator (SOI) allowing for high-power and high-frequency elec-
tronics, microelectronics components with low energy consump-
tion. After this, several bonding techniques have been developed
(e.g. silicon direct bonding, anodic bonding) and are being developed
(e.g. low-temperature plasma-assisted direct bonding) to achieve
hybrid components, as III-V semiconductors on silicon-based
substrates, monolithic integration of optoelectronic devices with
high-speed silicon integrated circuits, three-dimensional stacking
of integrated circuits (ICs) or circuits transfer onto a variety
of substrates. An overview of more recent activities on several
techniques for attaining low-temperature bonding is presented.
