ABSTRACT
Figure 19.30 Characterization and simulation of an MOS device using Mn0.05Ge0.95 QDs as the channel layer. (a) C-V curves measured at 77 K with a frequency of 100 kHz. The forward and backward scans are plotted in blue and red, respectively. The plot clearly shows a transition between hole accumulation at negative bias and hole depletion at positive bias. The green curve shows the simulated hole concentrations as a function of the gate bias at the centre of the Mn0.05Ge0.95 QD. Inset: Schematic of the device. (b) Simulated hole concentrations in Mn0.05Ge0.95 QDs with different biases. (c) Maps of hole concentration under different gate voltages at 77 K. Reproduced from Nat. Mater., 9, pp. 337-344 (2010). Copyright © 2010, Nature Publishing Group [48]. See also Color Insert.
