ABSTRACT
In recent years, semiconductor nanostructures have become an attractive topic for many research groups worldwide due to their special physical properties comparing to classical solids or semiconductors [1-8]. The electronic and optical properties of nanostructures depend strongly on their nanomorphologies, including the size, the shape, and the density, etc. Experimental studies on the growth techniques of nanostructures are expected to develop a new ϐield for material design in nanosize for future application in fabrication of nanodevices. There are many reports on the growth of nanostructured semiconductors [9-16], such as nanowires, nanorods, nanoϐlowers, etc. Among them self-ordering and self-organization effects play a decisive role in these newly discovered growth modes [17-21]. Nanosized wires, rods, needles have promising potentials in extensive applications and are the fundamental building blocks for
fabricating short wavelength nanolasers, ϐield-effect transistors, ultrasensitive nanosized gas sensors, nanoresonators, transducers, actuators, nanocantilevers, and ϐield emitters. Many nanowires made of different materials, such as silicon, carbon, gallium nitride (GaN), zinc oxide (ZnO), titanium dioxide (TiO2), indium oxide (In2O3), have been fabricated for different applications [22-26]. In this chapter, nanofabrications of ZnO, diamond, and Si are presented, aiming at understanding the structural, optical, and electronic properties by experimental processes, which may provide useful information for next generation nanodevice fabrication.
