ABSTRACT
Current research interest in nanostructured ZnO is motivated by novel applications as electrode material for dye-sensitized solar cells [1], light-emitting diodes [2], photoluminescence [3], thermoelectrics [4], printable electronics [5] varistors [6,7], sensors [8], or nanogenerators [9]. All of these applications exploit the semiconducting properties of ZnO, which is a direct wide-
bandgap (3.3 eV) semiconductor [10], and take advantage of the fact that desired materials properties may be tailored by means of controlling the defect structure by aliovalent doping.
