ABSTRACT
With the advancement in fabrication technology of CNT-FETs, efforts have also been made in modeling of the transport behavior and models have been developed for the design of CNT-FETs based logic circuits [25-30]. CNT-FETs have also been modeled for the high frequency behavior [31-34]. In this chapter, we have attempted to develop analytical models characterizing the current transport in CNT-FETs for the analysis and design of integrated circuits. We have used these models for generating voltage transfer characteristics of basic logic gates such as the inverter, NAND, and NOR and shown the variation of the chiral vectors (n,m) of carbon nanotubes on their voltage transfer characteristics [35].
