ABSTRACT
In this chapter the basic device configuration or structure and operation of GaAs devices is described. The discussion is phenomenological in nature and covers most commonly used III-V electronic device types. Relevant equations that are important for discussion of fabrication and process parameters will be introduced without complete derivation. Two-terminal and three-terminal devices of unipolar and bipolar type will be discussed, starting with the simple p-n and metal-semiconductor junctions. No attempt will be made to describe these in a historical context and original references (e.g., Shockley) will not be mentioned. For details of device physics, the reader is referred to numerous excellent books on the subject matter [1-4].
