ABSTRACT
Measurements of physical and electrical properties of films and layers that are used in the fabrication of electronic devices are essential for the process development of these materials. Monitoring and statistical process control (SPC) of these are essential for maintaining process control and device quality during production. Electronic properties of bulk semiconductors and layers grown or deposited on wafers must be monitored. It is necessary to evaluate parameters such as carrier concentration, carrier mobility, and doping profiles of implanted or epigrown layers. Electrical properties of various layers deposited for contacts and interconnects are measured routinely for process control. Different physical and electrical techniques are discussed in this chapter. Some specific methods such as ohmic contact measurement are discussed in the chapters on those specific topics. Most common device parameters for field-effect transistors (FETs) and heterojunction bipolar transistors (HBTs) are also described. 21.2 Sheet ResistanceSheet resistance of semiconducting and conducting layers is generally measured by the four-point probe method or contactless methods.
