ABSTRACT
Magnetoresistive random accessmemories (MRAMs) are a relatively
new class of nonvolatile memories exploiting the hysteretic prop-
erties of ferromagnetic (FM) materials for data storage and magne-
toresistive phenomena (giant magnetoresistance [GMR], tunneling
magnetoresistance [TMR], anisotropic magnetoresistance [AMR])
for data reading. Briefly, an MRAM chip is a bidimensional array
of magnetoresistive devices with stable remanent states (0 and 1),
integrated on a silicon complementary metal-oxide semiconductor
(CMOS) circuit allowing one to separately address each memory
element.
