ABSTRACT
This chapter reviews current research and development in the field
of nanocrystal (nc) memories with emphasis on Si-nc nonvolatile
memories. The operation principles and advantages of nc memories
together with the issues associated with nc fabrication, device
architecture and implementation in manufacture are presented
comprehensively. Original experimental results and data analysis
are reported in order to give a detailed picture of the physical
mechanisms that determine the program/erase operations as well
as the reliability characteristics of nc memories. The current state-
of-the-art and prospects for future development of nc memory
devices are also summarized.