ABSTRACT

This chapter reviews current research and development in the field

of nanocrystal (nc) memories with emphasis on Si-nc nonvolatile

memories. The operation principles and advantages of nc memories

together with the issues associated with nc fabrication, device

architecture and implementation in manufacture are presented

comprehensively. Original experimental results and data analysis

are reported in order to give a detailed picture of the physical

mechanisms that determine the program/erase operations as well

as the reliability characteristics of nc memories. The current state-

of-the-art and prospects for future development of nc memory

devices are also summarized.