ABSTRACT
This chapter discusses the Two-Dimensional (2D) ballistic transport of Rashba electrons in a straight structure in 2D electron gasses. It explains the influence of the structure on electron transport. It is found that the transmission probabilities as functions of the effective wave vector are independent of the sign and magnitude of the Rash coefficient α. The first model of spin transistor proposed by Datta working by controlling the strength of Rashba spin-orbit interaction was demonstrated to be feasible in narrow-gap semiconductors. They confirmed the Datta's theory— an oscillatory channel conductance as a function of monotonically increasing gate voltage. The transmission probabilities of the electron with energy higher than the second transverse sub-band include contributions from different sub-bands, which means in the transport process there is coupling between different sub-bands.
