ABSTRACT
Memory is the first and foremost application of silicon single electron devices (SEDs) and has been extensively researched. One reason is that the SEDs can operate in smaller dimensions and this directly leads to the increased memory density. Another is that memory usually has a periodic and simple structure and this is expected to make the implementation of the emerging devices straightforward. The scaling limit in the current silicon memories, both flash memory and dynamic random access memory, also adds to the demand for single-electron memories. The memory unit with a discrete trap-like memory node has attracted much attention because it operates using fewer electrons and can possibly operate at a high density a high speed, and low power dissipation. In these memories, the memory node includes floating-node type or natural nitride trap and semiconductor nanocrystals. Most of the proposed single-electron memories are floating-node types, in which a limited number of electrons are stored in the floating memory node.
