ABSTRACT
The x-ray diffuse scattering (XRDS) from microdefects (MD) formed in the bulk of semiconductor single crystals was investigated using a triple crystal diffractometer. The measurements of the XRDS distribution in close vicinity of a reciprocal lattice point makes it possible to reveal in some cases a simultaneous presence of the microdefects with vacansionic and interstitial type of dilatation. MD identification procedure is described for a Si-doped HB-GaAs single crystal.
