ABSTRACT

The characterisation by Transmission Electron Microscopy of the morphology of InGaP epitaxial layers grown by Metal Organic Vapour Phase Epitaxy over misoriented GaAs (001) substrates is reported. The study is made as a function of the cut-off angle from [001] to [110] ranging between 0° and 25°. Both, phase separation and the existence of the CuPt-type ordered superstructures, are observed. The presented results indicate that these two mechanisms are competing, occurring the maximum order for a cut-off angle of 2°.1