ABSTRACT
This chapter discusses the yield management methods were reviewed along with details defect sources, process/equipment control and the application of defect detection and analysis tools, yield models and software for yield enhancement. It focuses on the management of the random defect sources. Besides device design and process integration, trace ion/metal contamination control represents the biggest yield challenge. Typical contamination and defect reduction sources for different processes are briefly described below. Newer materials for oxides, advanced deposition methodologies, and newer precursor chemicals for film growth introduce more sources for particle generation or defectivity and require attention at the process introduction to develop reduced-particle or particle-free processes. A culture where yield improvement activities is emphasized and rewarded must be developed and continually encouraged since the work is often in conflict with other goals such as improved lot cycle time. A critical factor in yield improvement has been the proper engineering of the wafer edge region.
