ABSTRACT
In this paper, we establish the physical simulation model of organic static induction transistor, take the finite element method and base on the given boundary conditions (Wang 2012), the simulation model will be gained by using a discrete numerical method by the computer, get the potential distribution patterns of model (Zhang et al. 2012). According to the functional characteristics of these pattern analysis OSIT and bias, and the relationship between structure parameters. Verifies the correctness of the result of the experiment, For OSIT practical theoretical preparation.
