ABSTRACT
The modern very large scale integrated (VLSI) circuits consist of several billions of transistors with the Metal-Oxide Semiconductor (MOS) transistor forming the basic building block. This chapter presents the essential features of compact device models for the scaled MOS transistor at an introductory level. The commercial circuit simulators use compact device models for circuit simulation purposes. The compact model developed by the University of Berkeley, which is coined as the BSIM model, has been considered while pointing out the commercial use of the various modeling aspects. The compact model equations are often functions of transistor dimensions and thus are scalable. The body of a MOS transistor is usually connected to a constant power supply voltage or ac ground. The existence of the 2-D channel field in short-channel MOS transistor is the fundamental difference between long-channel and short-channel MOS transistors. The chapter provides the essential background materials for VLSI designers for circuit design purposes.
