ABSTRACT

This chapter describes chemical-mechanical planarization (CMP) technology for emerging devices and materials. From the point of view of the researcher whose specialty is detailed processing, the advent of CMP technology has diverse meaning. The height of floating gate should be controlled through the CMP process because that greatly influences word-line and bit-line cells. Poly isolation CMP without selectivity induces dishing and rugged topography on surfaces, which result in deterioration in the quality of interlayers in the device. The difference of hydrophobicity between poly Si and oxide film is the key factor to achieving the high removal selectivity in the poly isolation CMP process. The chapter discusses dynamic random access memory under 60 nm of metal-oxide semiconductor memory, CMP processing applied to NAND flash, and CMP processing for next-generation memory producing. New structures and materials were used for improving the performance of these devices. CMP processing has faced a new challenge as well.