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Book

Compound Semiconductors 2004

Book

Compound Semiconductors 2004

DOI link for Compound Semiconductors 2004

Compound Semiconductors 2004 book

Compound Semiconductors for Quantum Science and Nanostructures

Compound Semiconductors 2004

DOI link for Compound Semiconductors 2004

Compound Semiconductors 2004 book

Compound Semiconductors for Quantum Science and Nanostructures
Edited ByJ.C. Woo, H. Hasegawa, Y.S. Kwon, T. Yao, K.H. Yoo
Edition 1st Edition
First Published 2005
eBook Published 21 April 2014
Pub. Location Boca Raton
Imprint CRC Press
DOI https://doi.org/10.1201/9781482269222
Pages 400
eBook ISBN 9780429177101
Subjects Engineering & Technology, Physical Sciences
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Woo, J.C., Hasegawa, H., Kwon, Y.S., Yao, T., & Yoo, K.H. (Eds.). (2005). Compound Semiconductors 2004: Compound Semiconductors for Quantum Science and Nanostructures (1st ed.). CRC Press. https://doi.org/10.1201/9781482269222

ABSTRACT

Compound Semiconductors 2004 was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to September 16, 2004. It attracted over 180 submissions from leading scientists in academic and industrial research institutions, and remains a major forum for t

TABLE OF CONTENTS

chapter |8 pages

A Lagrangian Approach to Wavefunction Engineering of Layered Quantum Semiconductor Structures

chapter |4 pages

Dependence of Band-Offset on Sb content in AlGaAs/ GaAsSb Quantum Wells Grown on GaAs by MBE

chapter |4 pages

Band Alignment Analysis of Strained GaAsSb/InGaAs Quantum Wells

chapter |4 pages

Fabrication of Self-Assembled Nanodots at Arbitrary Locations by Spatially Controlled Implant Source Growth

chapter |6 pages

Anomalous Current Leakage and Depletion Width Control in Nanometer Scale Schottky Gates Formed on AlGaAs/GaAs Surface

chapter |4 pages

Nonlinear Variable Capacitance Characteristics in GaInP/GaAs Triple Barrier Resonant Tunneling Diodes

chapter |4 pages

Single electron transistors using single self-assembled InAs quantum dots

chapter 70|4 pages

nm InGaAs/InAlAs/GaAs Metamorphic HEMTs for High Frequency Applications

chapter 2|4 pages

stage high gain W-band amplifier using metamorphic HEMT technology

chapter |4 pages

Improved Breakdown Voltage and Output Conductance Characteristics of GaAs pHEMTs using Composite Gate fabricated by Digital Recess Method

chapter |4 pages

High performance 0.1 pm GaAs PHEMT with Si pulse doped cap layer for 77GHz car radar

chapter |8 pages

Development of a Highly-Reliable Over 200 W GaN-HEMT Power Amplifier

chapter |4 pages

High Speed InP HBT Driver IC for Laser Modulations

chapter |10 pages

(GaIn)(NAsSb): The Challenges for Long Wavelength Communications Devices

chapter |4 pages

Ultra-high speed internal RF-gain InGaAs/InAlAs avalanche photodetector

chapter |4 pages

Very high sensitivity operation in quantum dot infrared photodetectors

chapter |4 pages

RF-enhanced InGaAs/InAlAs uni-traveling-carrier photodetector

chapter |4 pages

Terahertz-wave Generation using GaSe Crystals with Different Carrier Densities

chapter |6 pages

Physical aspects of high-power semiconductor lasers

chapter |4 pages

Spontaneous recombination lifetime in compressively strained InGaAs and InGaP Quantum Well Lasers Grown on GaAs Substrates

chapter |6 pages

Surface-Emitting and Edge-Emitting Mid-IR Photonic-Crystal Distributed-Feedback Lasers

chapter |4 pages

Room Temperature Operation of InGaAs/InGaAsP/InP Quantum Dot Lasers Grown by MOCVD

chapter |6 pages

Nanostructured optoelectronic devices: photonic crystals and microcavities

chapter |4 pages

Characterization of all-optical modulation due to intersubband transition in a ridge waveguide with GaN/AIN quantum wells

chapter |4 pages

Ultrafast Optical Gate Switch of AlGaAs/AlAs Multi-Layer Structure Using Enhanced Nonlinear Response at Two-Photon Resonance

chapter |4 pages

Comparative Study of Static and Dynamic D-type Flip-Flop Circuits using InPHBT’s

chapter |4 pages

Spin dependent carrier transport across nonmagnetic p-n heterojunction: the first step for the realization of circularly polarized photodiodes

chapter |4 pages

Spin dependent transport in hybrid magnetic tunnel junctions

chapter |4 pages

Magnetization dependent photoconductivity of Ga1-xMnxAs/ZnSe diode structures

chapter |6 pages

Spins Free of Charge: All-optical Control of Spin in GaAs

chapter |4 pages

Effect of carbon co-doping on III-As based diluted magnetic semiconductors

chapter |4 pages

Tailoring of the structure and magnetic properties of α-MnAs spin injection layers on GaAs(001)

chapter |8 pages

Heusler Half-Metals on GaAs for Spin Injection

chapter |8 pages

Ferromagnetic GaSb/InAs-based Materials and MnAs Thin Films for Spintronics Applications

chapter |6 pages

GaN-based Diluted Magnetic Semiconductors for Spintronics

chapter |4 pages

Ferromagnetic Properties of Gd doped GaN

chapter |4 pages

Split gate Hall effect devices

chapter |4 pages

Fabrication of self-organized GalnNAs quantum dots on GaAs (311)B by atomic hydrogen-assisted RF- molecular beam epitaxy

chapter |6 pages

Force/displacement Detection using Quantum Effects in InAs/Al0.5Ga0.5Sb Two-dimensional Electron Systems

chapter |4 pages

Self-Consistent Analysis of Electron Transport Properties in Quantum Wires

chapter |4 pages

Insulator-quantum Hall transitions in a two-dimensional electron gas using self-assembled InAs dots

chapter |4 pages

Excitonic diamagnetic shift and oscillating Zeeman splitting in quantum wire: Magneto-photoluminescence study

chapter |4 pages

AlGaAs/InGaAs PHEMT with Multiple Quantum Wire Channels

chapter 20|4 pages

Gbps operation of RTD/HBT MOBILE (MOnostable Bistable Logic Element) IC based on an InP technology

chapter |4 pages

Speed-Power Performances of Quantum Wire Switches Controlled by Nanometer-Scale Schottky Wrap Gates for GaAs based Hexagonal BDD Quantum LSIs

chapter |4 pages

FDTD Analysis of the Self-aligned Total Internal Reflection Mirrors for Micro-Ring Cavity Resonators

chapter |4 pages

40Gbps Waveguide Photodiode with Responsivity more than 1.0A/W, Large Alignment Tolerance, and High Saturation Current

chapter |6 pages

The Crystal Growth of GaN on MOCVD-Deposited GaN by the Method of Sublimation

chapter |4 pages

Surface morphologies of AlGaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by rf-MBE

chapter |4 pages

Growth and Characterization of High In Composition InGaN epilayers by rf-MBE

chapter |4 pages

Cubic InN Growth on R-plane (1012) Sapphire by ECR-MBE

chapter |4 pages

AlGaN/GaN Hetero-structure on GaN Templates with High Al Composition and Low resistance by RF-MBE

chapter |4 pages

High Quality AlGaN/AlN Superlattices grown on AIN/Sapphire Template by MOVPE

chapter |4 pages

Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001)Si by selective MOVPE

chapter |4 pages

Defect control in Ga(In)NAs films grown by atomic H assisted RF-MBE

chapter |4 pages

Electrical properties in hexagonal InN thin films

chapter |4 pages

Optical Phonon Dephasing Channels in GaN revealed by the Coherent Phonon Method

chapter |4 pages

Performance enhancement by using the n+-GaN cap layer and gate recess technology on the AlGaN/GaN HEMTs fabrication

chapter |4 pages

Electron Traps in AlGaN/GaN MIS-HEMTs Observed by Drain Current DLTS

chapter |4 pages

Surface potential transient of AlGaN/GaN HEMTs measured by Kelvin probe force microscopy

chapter |4 pages

AlGaN/GaN MIS-HEMTs with ZrO2 Gate Insulator

chapter |4 pages

Self-heating Effect Study of AlGaN/GaN HEMT using Pulsed IVT on the Isothermal Conditions

chapter |4 pages

Power performance enhancement of metamorphic In0.3Al0.7As/In0.45Ga0.55 As HEMTs using pseudomorphic channel design

chapter |4 pages

Highly Reflective and Crack-free Si-doped AlN/GaN Distributed Bragg Reflectors Grown on 6H-SiC(0001) by Molecular Beam Epitaxy

chapter |8 pages

High Power InGaN/GaN Flip-Chip Blue and White LED

chapter |4 pages

High power AlInGaN-based multi-quantum well laser diode with low operating current

chapter |4 pages

Crack-free ZnO layer growth on glass substrates by MgO-buffer layer

chapter |6 pages

Effect of ambient gases on structural and optical characteristics of post annealed ZnO films

chapter |4 pages

Activation of group-I acceptors by hydrogen codoping in ZnO

chapter |4 pages

Optical properties of cubic MgZnO thin films

chapter |4 pages

Parameters required to simulate electric characteristics of SiC devices

chapter |4 pages

Enhancement of ionization efficiency of acceptors by their excited states in heavily doped wide bandgap semiconductors

chapter |8 pages

High Extraction Efficiency Light-Emitting-Diodes using Hemispherical Corrugated Interface Substrate

chapter |4 pages

Transconductance Linearity Improvement of E-pHEMT at High Vgs

chapter |4 pages

First-principles investigations of Ga and As adsorption properties on a GaAs(110) surface

chapter |4 pages

Development of plasma-free etch chemistry to realize defect-free GaAs micromechanical resonator structures

chapter |8 pages

Patterned InGaAs Quantum Dots by Selective Area MOCVD

chapter |4 pages

Growth of AlGaN on Al2O3 substrates by mixed-source HVPE

chapter |4 pages

CrN Buffer Layer Study For GaN Growth Using Molecular Beam Epitaxy(MBE)

chapter |4 pages

Growth and Characterization of HVPE GaN on c-sapphire with CrN Buffer Layer

chapter |4 pages

Doping of GaN, AlGaN by mixed-source HVPE

chapter |4 pages

Investigation of thermal degradation on structural and optical qualities of InGaN/InGaNMQWs

chapter |4 pages

Low threshold current GalnNAs QW LD with InGaAs/GaNAs barriers

chapter |4 pages

The effect of surface treatment on Zinc Oxide

chapter |4 pages

Photoluminescence study of ZnO thin films deposited by pulsed laser ablation

chapter |6 pages

Photoluminescence from Single Hexagonal Nano-Wire Grown by Selective Area MOVPE

chapter |6 pages

Diluted Semiconductors Formed from Energetic Beams

chapter |4 pages

A New GaAs MOS Varactor Fabricated Using a Low-Cost GaAs Oxidation Technology

chapter |6 pages

Measurements for nanocrystals in silicon deposited by rf-magnetron sputtering

chapter |4 pages

Structure Properties and Phase Evolution of MgxZn1-xO Layers Grown on c-sapphire by P-MBE

chapter |4 pages

Bi-induced phonons in GaAs1-xBix

chapter |4 pages

Temporal Behavior of Absorption Changes and Yellow Luminescence in Thin InGaN Epilayers

chapter |6 pages

High-energy photoemission studies of transition metal ion doped III-V nitrides

chapter |6 pages

Strain effect on energy band of InAs/InP quantum dots by GaAs layer insertion

chapter |4 pages

Electron-Hole Separation in InAs Quantum Dots

chapter |4 pages

Spin relaxation in charged InAs/GaAs quantum dots

chapter |4 pages

Anti-parallel spin interaction between the carriers in coupled quantum dots

chapter |4 pages

Raman study of biaxial strain in InGaN-GaN self-assembled quantum dots grown on sapphire (0001)

chapter |8 pages

Optical properties of II-VI-based magnetic semiconductor self-assembled quantum dots

chapter |4 pages

Interpretation of Leakage Current in Ni/n-(Al)GaN Schottky Structures and Its Influence on Surface Preparation Conditions

chapter |6 pages

An analysis of the kink phenomena at lower drain current in GaAs-based short-gate MHEMTs using the hydrodynamic transport simulation

chapter |4 pages

Demonstration of the formation of GaAs homojunction far-infrared detection by reflection measurements

chapter |4 pages

Observation of optical Fano resonance by measuring PL spectrum of ZnS:Mn/SiO2 1 D photonic crystal

chapter |4 pages

Interface analysis for CdMgTe and AlGaAs multilayer systems using Ellipsometric method

chapter |4 pages

Imaging Spectroscopic Ellipsometry Study on TFT-LCD device structures

chapter |4 pages

On the Hole Migration through DNA

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