ABSTRACT
Heterostructures of InAs/GaSb have served as the archetypal system for the study of the type II semiconductor band alignment. The precarious balance that must be maintained in molecular beam epitaxy growth may also be undermined by the complexities of heteroepitaxy. The nature of the growth surface itself may contribute to the difficulties in establishing a smooth and abrupt heteroepitaxial interface. The chapter presents X-ray diffraction and Raman spectroscopy data for InAs/GaSb superlattice, and reviews the cross-sectional scanning tunneling microscopy results of Feenstra et al. Shanabrook and coworkers identified the bonding at the interface through the use of Raman spectroscopy. One of the best-known consequences of the translational symmetry of a crystal lattice is Bloch’s Theorem, which states, in part, that the electron density in such a solid must have the same periodicity as the lattice. High-resolution transmission electron microscopy imaging experiments found that there was a degree of disorder in InAs/GaSb interfaces grown on GaSb buffer layers.
