Flexible Parylene-C Material and Its Applications in MOSFETs, RRAMs, and Sensors
This chapter focuses on the properties of parylene-C and its applications in metal-oxide semiconductor field-effect transistors (MOSFETs), resistive random access memories (RRAMs), and sensors. Parylene-C can be deposited by the polymer chemical vapor deposition process at room temperature. Parylene-C is a flexible and transparent polymer with conformal pinhole-free coverage and water-free and oxygen-free surface, which has been chosen as the gate dielectric, substrate, and passivation material to improve the performance of MOSFETs. Although the semiconductor and its contact have traditionally attracted considerable attention in organic field-effect transistors, the gate dielectric also plays an increasingly important role in improving the performance of MOSFETs. The switching mechanism of parylene-C-based RRAM devices was attributed to the formation and dissolution of a metal bridge related to the redox reaction of the active metal electrode. Among various materials, parylene-C has been widely used for the design of implantable pressure sensors due to its excellent physical and chemical properties.