chapter  8
12 Pages

Spin Field Effect Transistors

In 1990, Datta and Das proposed a seminal concept that is the forbearer of all spin field effect transistors (SPINFETs)

[1]. They examined and analyzed a device structure identical to that of a MOSFET, except that the source and drain contacts are ferromagnetic. Figure 8.1 shows this structure. For simplicity, we will assume that the channel is a quantum wire, with only the lowest transverse subband occupied by carriers.