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Indium Nitride and Related Alloys

DOI link for Indium Nitride and Related Alloys

Indium Nitride and Related Alloys book

Indium Nitride and Related Alloys

DOI link for Indium Nitride and Related Alloys

Indium Nitride and Related Alloys book

Edited ByTimothy David Veal, Christopher F. McConville, William J. Schaff
Edition 1st Edition
First Published 2009
eBook Published 18 August 2009
Pub. location Boca Raton
Imprint CRC Press
DOI https://doi.org/10.1201/9780429293870
Pages 645 pages
eBook ISBN 9780429293870
SubjectsEngineering & Technology, Physical Sciences
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Veal, T. (Ed.), McConville, C. (Ed.), Schaff, W. (Ed.). (2010). Indium Nitride and Related Alloys. Boca Raton: CRC Press, https://doi.org/10.1201/9780429293870

Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV.

The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor.

Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field. 

TABLE OF CONTENTS

chapter 1|50 pages

Molecular-beam epitaxy of InN

ByY. Nanishi, T. Araki, T. Yamaguchi

chapter 2|32 pages

Thermal stability, surface kinetics, and MBE growth diagrams for N- and In-face InN

ByC. S. Gallinat, G. Koblmu¨ller, and J. S. Speck

chapter 3|12 pages

Polarity-dependent epitaxy control of InN, InGaN and InAlN

ByX. Q. Wang, A. Yoshikawa

chapter 2|17 pages

4p-type doping of In- and N-polarity InN

.0x10 1.5x10

chapter |2 pages

Al In N

Qy(rlu) x=0.48 x=0.51

chapter |7 pages

In Al N x=0.98 x=0.77 x=0.73 x=0.56 x=0.35 x=0.25 GaN x=0.15 x=0.09 30 31 32 33 34 35 36 37

By(002)

chapter 4|18 pages

InN in brief: Conductivity and chemical trends

ByP. D. C. King, T. D. Veal, C. F. McConville

chapter 5|42 pages

Transport properties of InN

ByV. Cimalla, V. Lebedev, O. Ambacher, V. M. Polyakov, F. Schwierz, M. Niebelschu¨tz, G. Ecke, T. H. Myers, and W. J. Schaff

chapter 6|31 pages

Electronic states in InN and lattice dynamics of InN and InGaN

ByV. Yu. Davydov and A. A. Klochikhin

chapter |7 pages

1 L -

chapter |24 pages

a-InN:Mg/r-Al

By(595) (449.5) (490.5)

chapter 7|30 pages

Optical properties of InN and related alloys

ByJ. W. L. Yim, J. Wu

chapter 8|42 pages

Theory of InN bulk band structure

ByJ. Furthmu¨ller, F. Fuchs, and F. Bechstedt

chapter 9|62 pages

Ellipsometry of InN and related alloys

ByR. Goldhahn, P. Schley, and M. Ro¨ppischer

chapter 10|42 pages

Electronic properties of InN and InGaN: Defects and doping

ByW. Walukiewicz, K. M. Yu, J. W. Ager III, R. E. Jones, and N. Miller

chapter 11|26 pages

Theory of native point defects and impurities in InN

ByA. Janotti and C. G. Van de Walle

chapter 12|52 pages

Surface electronic properties of InN and related alloys

ByT. D. Veal, P. D. C. King, C. F. McConville

chapter 13|18 pages

Theory of InN surfaces

ByC. G. Van de Walle

chapter 14|26 pages

Structure of InN and InGaN: Transmission electron microscopy studies

ByZ. Liliental-Weber

chapter 15|20 pages

InN-based dilute magnetic semiconductors

ByS. M. Durbin

chapter 16|38 pages

InN-based low dimensional structures

ByS. B. Che, A. Yoshikawa

chapter 17|18 pages

InN nanocolumns J. Grandal, M. A. Sa´nchez-Garcı´a, E. Calleja, S. Lazic´, E. Gallardo, J. M. Calleja,

ByE. Luna, A. Trampert, M. Niebelschu¨tz, V. Cimalla, and O. Ambacher
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