chapter  10
42 Pages

Electronic properties of InN and InGaN: Defects and doping

ByW. Walukiewicz, K. M. Yu, J. W. Ager III, R. E. Jones, and N. Miller

W. Walukiewicz1, K. M. Yu1, J. W. Ager III1, R. E. Jones1,2, and N. Miller1,2 1 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United

10.1 Introduction The last decade has witnessed an unprecedented growth in fundamental studies and practical applications of the group III-nitrides and their alloys. GaN and Garich InGaN and AlGaN thin films are currently used in a variety of commercial optoelectronic devices, including green, blue, and ultraviolet light emitting diodes (LEDs) and lasers (see, for example, Ref. [10.1]). Group III-nitrides have also found applications in other electronic devices. For example, advanced GaN/AlGaN high power microwave transistors are now commercially available. This spectacular progress was made possible by rapid advances in bulk materials synthesis and epitaxial growth techniques.