chapter  3
12 Pages

Polarity-dependent epitaxy control of InN, InGaN and InAlN

ByX. Q. Wang, A. Yoshikawa

Due to the nature of the limited growth temperature, the effect of growth temperature on the growth behavior and properties of InN is more serious than for GaN and AlN. The epitaxial temperatures of In-rich InGaN and InAlN at different polarities show similar behavior to that of InN, that is, N-polar shows a higher maximum growth temperature, since they are mainly limited by the growth temperature of InN.