chapter  2
17 Pages

4p-type doping of In- and N-polarity InN

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Mg-doped InN (InN:Mg) films were grown on GaN templates. A 50-nm-thick undoped InN layer and InN:Mg layer were grown in sequence under slightly In-rich growth conditions, where the TG were 480-500◦C and 600◦C for In-and N-polarity, respectively [3.18]. It was found that the effect of Mg doping on the properties of InN with different polarities are very similar and thus we mainly discuss the Inpolarity case here.