ABSTRACT
The understanding of the electronic properties of a crystalline solid starts from the periodic potential that arises from the ordered arrangement of the atoms in a lattice. The fundamental characteristics of an insulator, semiconductor, or metal can be understood by a careful analysis of its periodic potentials that are essentially determined by the chemical elements involved and therefore by nature itself. This chapter describes the fabrication procedures of artificial lateral superlattices. It provides a discussion on electron transport in square and rectangular antidot lattices. The chapter summarizes high-frequency studies on lateral superlattices containing geometries such as dot, coupled dot, and antidot structures as well as arrays of large electron disks, with a focus on interaction phenomena in array-type devices. Conceptually, such devices appear attractive since they combine the possibilities of highest integration with low power consumption and few external interconnects and are also based on a well-established semiconductor technology.
