ABSTRACT
In the current chip technology, the capability of silicon-on-chip (SOC) memory is quickly developing to increment worldwide execution. As a more prominent reserve memory is required, static random access memory (SRAM) assumes a continuously critical job in current chip frameworks, compact gadgets, and cell phones. FinFET technology has enormous potential to replace complementary metal oxide semiconductor technology in most recent SRAM because of its greater channel flexibility with increased control of gate over the channel without conceding performance. The 7T cell design also employs dispersed read and write signal lines but uses only one extra n-type metal oxide semiconductor transistor to achieve read-disturb-free operation, thus increasing the cell area by 13%. Also, the leakage current is usually less in FinFET as compared with metal oxide semiconductor field-effect transistor at subthreshold system. Therefore, a FinFET-based efficient smart embedded memory incorporated with new circuit topologies is explored for future industry trend.
