ABSTRACT
In this chapter, the performance analysis of AlGaN/GaN heterostructure field-effect transistor (AlGaN/GaN HFET) is performed. The AlGaN/GaN HFET provides several merits over Si and AlGaAs/GaAs material devices including higher inversion charge at the heterointerface. The performance analysis of AlGaN/GaN HFET is further extended for different device geometries and parametric variations. This chapter is further extended to derive the voltage transfer characteristics of the invertor circuit, highlighting the utility of the model.
