ABSTRACT
Effect of hydrostatic pressure (of up to 1.6GPa at up to 1620K) on defect structure of Cz-Si and SiGe/Si was investigated. It were observed pressure – stimulated activation of initially present inhomogeneities with creation of oxygen – related defects in Cz-Si and enhancement of Ge diffusion with generation of misfit dislocations in SiGe/Si.
