ABSTRACT
Many simulation tasks suggested that carrier localization, induced by these fluctuations, has a strong influence on the broadening of the light emission spectrum. The influence of random alloy fluctuation on the transport is seldom considered due to the need of large amounts of computational power. InGaN quantum well (QW) light-emitting diode (LED) has become a popular technology in solid-state lighting. Due to the strong lattice mismatch between InN and GaN layers, the self-formed random indium fluctuation has played an important role in influencing LED electrical and optical properties. The chapter examines influence of nanoscale indium fluctuation on the emission spectrum and then the relation of carrier transport and radiative efficiency in LEDs. The randomly generated indium fluctuation in the QW in this simulation will be used again in the study with 3D modeling. The chapter shows that by considering the indium fluctuation in multiple QW LEDs, the electrical and optical properties are much closer to the commercial blue light LEDs.
