ABSTRACT
Power semiconductor devices are the key enabling technology for power conversion applications. The development of compact models is especially important for extreme environment applications, where testing and validation of power electronic circuits under application conditions can be practically impossible, especially for simultaneous stressors, for example, extreme temperature and radiation. Based solely on the time, energy, and monetary savings that circuit simulation offers, it is apparent why the popularity of circuit simulators, compact device models, and parameter extraction tools has increased dramatically over the past two decades. For majority carrier power devices such as power MOSFETs, the combination of a 10 times higher dopant density along with a 10 times thinner blocking layer yields a silicon carbide device with a factor of 100 advantage in resistance compared to that of Si majority carrier devices. Hence, the need for a power MOSFET model capable of describing a wide range of device characteristics has arrived.
