ABSTRACT
Extension of the operating temperature envelope of transistor-based integrated circuits (ICs) well above the effective 300°C limit of silicon-on-insulator technology is expected to enable important improvements to aerospace, automotive, energy production, and other industrial systems. One critical requirement for all ICs, including extreme temperature ICs, is that they function reliably over a designed product lifetime. Driven by the primary need to realize integrated circuits with prolonged 500°C operational durability, an epitaxial n-channel 6H-SiC junction field-effect transistor IC technology baseline was selected for development. The resistive-load inverting amplifier is a fundamental subcircuit of field-effect transistor IC technology. All other circuits contain similar transistor-resistor series subcircuits and follow the same general temperature-dependent behavior trends. For many envisioned applications, far greater circuit complexity than the few-transistor ICs is required.
